ONSEMI NTMFS6H800NT1G | 搜芯易Sourcengine

ONSEMI NTMFS6H800NT1G

生命周期状态
Active
RoHS
符合RoHS标准
说明
NTMFS6H800NT1G ON Semiconductor Transistors MOSFETs N-CH 80V 28A 5-Pin(4+Tab) SO-FL T/R - Arrow.com
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-F5
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
5
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
200
Drain Current-Max (ID) (A)
203
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
80
Feedback Cap-Max (Crss) (pF)
27
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
1271
Pulsed Drain Current-Max (IDM) (A)
900
Drain-source On Resistance-Max (ohm)
0.0035
Time@Peak Reflow Temperature-Max (s)
30