ONSEMI NTMFS5C604NLT1G-UIL3 | 搜芯易Sourcengine

ONSEMI NTMFS5C604NLT1G-UIL3

生命周期状态
Active
说明
MOSFET-Power Single N-channel
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-F6
Configuration
Single
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
200
Drain Current-Max (ID) (A)
287
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
40
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
776
Pulsed Drain Current-Max (IDM) (A)
900
Drain-source On Resistance-Max (ohm)
0.0017