NTMFD4C20NT3G
ONSEMI
- 生命周期状态EOL
- RoHS符合RoHS标准
- 说明MOSFET 2N-CH 30V 9.1A/13.7A 8DFN
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-F8
- Configuration2 N-Channel (Dual)
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN SOURCE
- Terminal FinishTin (Sn)
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)1.88
- Drain Current-Max (ID) (A)9.1
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)30
- Feedback Cap-Max (Crss) (pF)125
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Drain-source On Resistance-Max (ohm)0.0108
- Time@Peak Reflow Temperature-Max (s)30
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NTMFD4C20NT3G