NTMFD4C20NT1G
ONSEMI
- 生命周期状态NRFND
- RoHS符合RoHS标准
- 说明ONSEMI - NTMFD4C20NT1G - MOSFET, DUAL N-CH, 30V, 18A, DFN
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Terminal FinishMatte Tin (Sn) - annealed
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)4.6
- Drain Current-Max (ID) (A)27.4
- Moisture Sensitivity Level1
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)150
- Time@Peak Reflow Temperature-Max (s)30
- Configuration2 N-Channel (Dual)
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NTMFD4C20NT1G