NTE Electronics Inc. NTE79 | 搜芯易Sourcengine

NTE Electronics Inc. NTE79

生命周期状态
Discontinued
说明
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-202
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-202
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
5
Power Dissipation-Max (W)
10
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
2
Collector-emitter Voltage-Max (V)
18
Power Dissipation Ambient-Max (W)
15
Transition Frequency-Nom (fT) (MHz)
27