NTE Electronics Inc. NTE76 | 搜芯易Sourcengine

NTE Electronics Inc. NTE76

生命周期状态
Discontinued
说明
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-117
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
O-CRPM-F4
Configuration
SINGLE
JEDEC-95 Code
TO-117
Package Shape
ROUND
Package Style
POST/STUD MOUNT Meter
Surface Mount
NO
Terminal Form
FLAT
DLA Qualification
Not Qualified
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
30
Power Dissipation-Max (W)
5
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.4
Collector-emitter Voltage-Max (V)
30
Power Dissipation Ambient-Max (W)
5
Transition Frequency-Nom (fT) (MHz)
1500