NTE Electronics Inc. NTE475 | 搜芯易Sourcengine

NTE Electronics Inc. NTE475

生命周期状态
Discontinued
说明
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
O-MUPM-D3
Configuration
SINGLE
Package Shape
ROUND
Package Style
POST/STUD MOUNT Meter
Surface Mount
NO
Terminal Form
SOLDER LUG
Case Connection
EMITTER
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Power Dissipation-Max (W)
11
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
1.5
Collector-emitter Voltage-Max (V)
18
Power Dissipation Ambient-Max (W)
11.5
Collector-base Capacitance-Max (pF)
20
Transition Frequency-Nom (fT) (MHz)
350