NTE Electronics Inc. NTE313 | 搜芯易Sourcengine

NTE Electronics Inc. NTE313

生命周期状态
Active
说明
RF TRANS NPN 30V 530MHZ 3SMD
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-CRDB-F3
Configuration
SINGLE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
FLAT
DLA Qualification
Not Qualified
Terminal Position
RADIAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
3
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
25
Power Dissipation-Max (W)
0.15
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.02
Collector-emitter Voltage-Max (V)
30
Collector-base Capacitance-Max (pF)
1
Transition Frequency-Nom (fT) (MHz)
530