NTE Electronics Inc. NTE2561 | 搜芯易Sourcengine

NTE Electronics Inc. NTE2561

生命周期状态
Discontinued
说明
RF Power Bipolar Transistor, 1-Element, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
20
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.5
Collector-emitter Voltage-Max (V)
80
Power Dissipation Ambient-Max (W)
1.75
Transition Frequency-Nom (fT) (MHz)
1200