NTE Electronics Inc. NTE2511 | 搜芯易Sourcengine

NTE Electronics Inc. NTE2511

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
RF Power Bipolar Transistor, 1-Element, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PSFM-W3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
WIRE
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
20
Power Dissipation-Max (W)
10
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
0.5
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
60
Power Dissipation Ambient-Max (W)
1.2
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED