NTE Electronics Inc. NTE2319 | 搜芯易Sourcengine

NTE Electronics Inc. NTE2319

生命周期状态
Active
RoHS
符合RoHS标准
说明
NTE ELECTRONICS - NTE2319 - Bipolar (BJT) Single Transistor, NPN, 450 V, 15 A, 175 W, TO-3, Through Hole
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
O-MBFM-P2
Configuration
SINGLE
JEDEC-95 Code
TO-3
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
2
Package Body Material
METAL
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
5
Power Dissipation-Max (W)
175
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
15
Collector-emitter Voltage-Max (V)
450
Power Dissipation Ambient-Max (W)
175
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED