NTE Electronics Inc. NTE221 | 搜芯易Sourcengine

NTE Electronics Inc. NTE221

生命周期状态
Active
RoHS
符合RoHS标准
说明
MOSFET N-CH VHF AMP/MIX
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-MBCY-W4
Configuration
N-Channel
JEDEC-95 Code
TO-72
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
DUAL GATE, DEPLETION MODE
Case Connection
SOURCE
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
4
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Power Dissipation-Max (W)
0.4
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
20
Feedback Cap-Max (Crss) (pF)
0.03
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED