NTE Electronics Inc. NTE16002 | 搜芯易Sourcengine

NTE Electronics Inc. NTE16002

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
O-MUPM-P3
Configuration
SINGLE
Package Shape
ROUND
Package Style
POST/STUD MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
5
Power Dissipation-Max (W)
23
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
3
Collector-emitter Voltage-Max (V)
40
Power Dissipation Ambient-Max (W)
23
Collector-base Capacitance-Max (pF)
20
Transition Frequency-Nom (fT) (MHz)
400