ONSEMI NTD40N03R-1G | 搜芯易Sourcengine

ONSEMI NTD40N03R-1G

生命周期状态
EOL
RoHS
符合RoHS标准
说明
MOSFET N-CH 25V 7.8A/32A IPAK
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
41.7
Drain Current-Max (ID) (A)
32
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
25
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Pulsed Drain Current-Max (IDM) (A)
100
Drain-source On Resistance-Max (ohm)
0.023