NTD3055L104-001
ONSEMI
- 生命周期状态EOL
- 说明MOSFET N-CH 60V 12A IPAK
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTin/Lead (Sn80Pb20)
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)12 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min60 V
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)61 mJ
- Peak Reflow Temperature (Cel)235
- Drain-source On Resistance-Max0.104 ohm
- Pulsed Drain Current-Max (IDM)45 A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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NTD3055L104-001