NTD3055-150G
ONSEMI
- 生命周期状态EOL
- 说明MOSFET N-CH 60V 9A DPAK
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTin (Sn)
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)28.8
- Drain Current-Max (ID) (A)9
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)105
- DS Breakdown Voltage-Min (V)60
- Feedback Cap-Max (Crss) (pF)40
- Peak Reflow Temperature (Cel)260
- Turn-off Time-Max (toff) (ns)75
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-55
- Power Dissipation Ambient-Max (W)28.8
- Avalanche Energy Rating (Eas) (mJ)30
- Pulsed Drain Current-Max (IDM) (A)27
- Drain-source On Resistance-Max (ohm)0.15
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NTD3055-150G