ONSEMI NTC050N065SC1 | 搜芯易Sourcengine

ONSEMI NTC050N065SC1

生命周期状态
Active-Unconfirmed
REACH
REACH compliant
说明
Power Field-Effect Transistor, 61.5A I(D), 650V, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XXUC-N3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
UNSPECIFIED
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
325
Drain Current-Max (ID) (A)
61.5
Transistor Element Material
SILICON CARBIDE
DS Breakdown Voltage-Min (V)
650
Feedback Cap-Max (Crss) (pF)
14.43
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
373