ONSEMI NTBGS002N06C | 搜芯易Sourcengine

ONSEMI NTBGS002N06C

生命周期状态
Active
RoHS
符合RoHS标准
说明
Trans MOSFET N-CH 60V 30A 7-Pin(6+Tab) D2PAK T/R
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G6
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263CB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
242
Drain Current-Max (ID) (A)
252
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
26
Peak Reflow Temperature (Cel)
245
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Drain-source On Resistance-Max (ohm)
0.002
Time@Peak Reflow Temperature-Max (s)
30