Nanya Technology Corporation NT8GC72B4NB3NJ-CG | 搜芯易Sourcengine

Nanya Technology Corporation NT8GC72B4NB3NJ-CG

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR DRAM Module, 1GX72, CMOS
类别
Semiconductors Memory ICs DRAMs DDR DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Access Mode
DUAL BANK PAGE BURST
Length (mm)
133.35
JESD-30 Code
R-XDMA-N240
Memory Width
72
Package Code
DIMM
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
J-STD-609 Code
e4
Memory IC Type
DDR DRAM MODULE
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
OTHER
Terminal Position
DUAL
Additional Feature
AUTO/SELF REFRESH
Memory Organization
1GX72
Number of Functions
1
Number of Terminals
240
Terminal Pitch (mm)
1
Number of Words Code
1G
Memory Density (bits)
77309411328
Package Body Material
UNSPECIFIED
Output Characteristics
3-STATE
Seated Height-Max (mm)
30.75
Supply Voltage-Max (V)
1.575
Supply Voltage-Min (V)
1.425
Supply Voltage-Nom (V)
1.5
Number of Words (words)
1073741824
Standby Current-Max (A)
0.649
Supply Current-Max (mA)
7484
Package Equivalence Code
DIMM240,40
Clock Frequency-Max (MHz)
667
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
0
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED