NT8GC64C8HB0NS-DI
Nanya Technology Corporation
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明DDR DRAM Module, 1GX64, 0.225ns, CMOS
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- Width3.8 mm
- Length67.6 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeDUAL BANK PAGE BURST
- JESD-30 CodeR-XDMA-N204
- Memory Width64
- Organization1GX64
- Package CodeDIMM
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density68719476736 bit
- Memory IC TypeDDR DRAM MODULE
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Terminal Pitch0.6 mm
- Access Time-Max0.225 ns
- Number of Ports1
- Number of Words1073741824 words
- Seated Height-Max30.15 mm
- Temperature GradeOTHER
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH; WD-MAX
- Supply Current-Max2772 mA
- Number of Functions1
- Number of Terminals204
- Number of Words Code1G
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Output Characteristics3-STATE
- Package Equivalence CodeDIMM204,24
- Operating Temperature-Max85 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)1.45 V
- Supply Voltage-Min (Vsup)1.2825 V
- Supply Voltage-Nom (Vsup)1.35 V
- Clock Frequency-Max (fCLK)800 MHz
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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NT8GC64C8HB0NS-DI