Nanya Technology Corporation NT8GC64B8HC0NS-CG | 搜芯易Sourcengine

Nanya Technology Corporation NT8GC64B8HC0NS-CG

生命周期状态
Active-Unconfirmed
RoHS
符合RoHS标准
说明
DDR3 DRAM Module, 1GX64, CMOS
类别
Semiconductors Memory ICs DRAMs DDR3 DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Width
3.8 mm
Length
67.6 mm
I/O Type
COMMON
Technology
CMOS
Access Mode
DUAL BANK PAGE BURST
JESD-30 Code
R-XDMA-N204
Memory Width
64
Organization
1GX64
Package Code
DIMM
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory Density
68719476736 bit
Memory IC Type
DDR3 DRAM MODULE
Operating Mode
SYNCHRONOUS
Terminal Pitch
0.6 mm
Number of Ports
1
Number of Words
1073741824 words
Seated Height-Max
30.15 mm
Terminal Position
DUAL
Additional Feature
AUTO/SELF REFRESH; WD-MAX
Supply Current-Max
2420 mA
Number of Functions
1
Number of Terminals
204
Standby Current-Max
0.317 Amp
Number of Words Code
1G
Package Body Material
UNSPECIFIED
Sequential Burst Length
8
Interleaved Burst Length
8
Package Equivalence Code
DIMM204,24
Operating Temperature-Max
85 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
1.575 V
Supply Voltage-Min (Vsup)
1.425 V
Supply Voltage-Nom (Vsup)
1.5 V
Clock Frequency-Max (fCLK)
667 MHz