Nanya Technology Corporation NT6TL64M32AQ-G1I | 搜芯易Sourcengine

Nanya Technology Corporation NT6TL64M32AQ-G1I

生命周期状态
Active-Unconfirmed
RoHS
符合RoHS标准
说明
DDR2 DRAM, 5.5ns, CMOS, PBGA168
类别
Semiconductors Memory ICs DRAMs DDR2 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
S-PBGA-B168
Package Code
FBGA
Package Shape
SQUARE
Package Style
GRID ARRAY, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR2 DRAM
Refresh Cycles
8192
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Number of Terminals
168
Terminal Pitch (mm)
0.5
Access Time-Max (ns)
5.5
Memory Density (bits)
2147483648
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Sequential Burst Length
4,8,16
Standby Current-Max (A)
3.0E-5
Supply Current-Max (mA)
119.2
Interleaved Burst Length
4,8,16
Package Equivalence Code
BGA168,23X23,20
Clock Frequency-Max (MHz)
400
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40