Nanya Technology Corporation NT6CL128T64CR-H1 | 搜芯易Sourcengine

Nanya Technology Corporation NT6CL128T64CR-H1

生命周期状态
Active
REACH
REACH compliant
说明
LPDDR3 DRAM, 128MX64, CMOS, PBGA216
类别
Semiconductors Memory ICs DRAMs LPDDR3 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Technology
CMOS
Width (mm)
12
Access Mode
MULTI BANK PAGE BURST
Length (mm)
12
JESD-30 Code
S-PBGA-B216
Memory Width
64
Package Code
VFBGA
Package Shape
SQUARE
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
LPDDR3 DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Temperature Grade
OTHER
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
Memory Organization
128MX64
Number of Functions
1
Number of Terminals
216
Terminal Pitch (mm)
0.4
Number of Words Code
128M
Memory Density (bits)
8589934592
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
0.8
Supply Voltage-Max (V)
1.3
Supply Voltage-Min (V)
1.14
Supply Voltage-Nom (V)
1.2
Number of Words (words)
134217728
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-25