Nanya Technology Corporation NT6CL1024F32AP-H1 | 搜芯易Sourcengine

Nanya Technology Corporation NT6CL1024F32AP-H1

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
说明
Commercial Mobile LPDDR3 SDRAM
类别
Semiconductors Memory ICs DRAMs DDR3L DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
10.5
Access Mode
MULTI BANK PAGE BURST
Length (mm)
11.5
JESD-30 Code
R-PBGA-B178
Memory Width
32
Package Code
VFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR3L DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Temperature Grade
OTHER
Terminal Position
BOTTOM
Memory Organization
1GX32
Number of Functions
1
Number of Terminals
178
Terminal Pitch (mm)
0.8
Number of Words Code
1G
Memory Density (bits)
34359738368
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
0.83
Supply Voltage-Max (V)
1.3
Supply Voltage-Min (V)
1.14
Supply Voltage-Nom (V)
1.2
Number of Words (words)
1073741824
Sequential Burst Length
8
Package Equivalence Code
BGA178,13X17,32/25
Clock Frequency-Max (MHz)
933
Operating Temperature-Max (Cel)
105
Operating Temperature-Min (Cel)
-30