Nanya Technology Corporation NT6AP512T32AV-J1 | 搜芯易Sourcengine

Nanya Technology Corporation NT6AP512T32AV-J1

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Commercial Mobile LPDDR4X 8Gb/16Gb DDP SDRAM
类别
Semiconductors Memory ICs DRAMs LPDDR4X DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
10
Access Mode
MULTI BANK PAGE BURST
Length (mm)
15
JESD-30 Code
R-PBGA-B200
Memory Width
32
Package Code
VFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
LPDDR4X DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
Memory Organization
512MX32
Number of Functions
1
Number of Terminals
200
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
3.5
Number of Words Code
512M
Memory Density (bits)
17179869184
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1
Supply Voltage-Max (V)
1.17
Supply Voltage-Min (V)
1.06
Supply Voltage-Nom (V)
1.1
Number of Words (words)
536870912
Sequential Burst Length
16,32
Standby Current-Max (A)
0.065
Supply Current-Max (mA)
800
Interleaved Burst Length
16,32
Package Equivalence Code
BGA200,10X20,32/25
Clock Frequency-Max (MHz)
2133
Operating Temperature-Max (Cel)
105
Operating Temperature-Min (Cel)
-30