Nanya Technology Corporation NT6AP256M16AV-J3 | 搜芯易Sourcengine

Nanya Technology Corporation NT6AP256M16AV-J3

生命周期状态
Active
RoHS
符合RoHS标准
说明
DDR4 DRAM, 256MX16, CMOS, PBGA200
类别
Semiconductors Memory ICs DRAMs DDR4 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
10
Access Mode
MULTI BANK PAGE BURST
Length (mm)
15
JESD-30 Code
R-PBGA-B200
Memory Width
16
Package Code
VFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
DDR4 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Terminal Finish
Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Temperature Grade
OTHER
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
Memory Organization
256MX16
Number of Functions
1
Number of Terminals
200
Terminal Pitch (mm)
0.8
Number of Words Code
256M
Memory Density (bits)
4294967296
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
0.83
Supply Voltage-Max (V)
1.17
Supply Voltage-Min (V)
1.06
Supply Voltage-Nom (V)
1.1
Number of Words (words)
268435456
Operating Temperature-Max (Cel)
105
Operating Temperature-Min (Cel)
-30