Nanya Technology Corporation NT6AP256F64AU-J2 | 搜芯易Sourcengine

Nanya Technology Corporation NT6AP256F64AU-J2

生命周期状态
Active-Unconfirmed
REACH
REACH compliant
说明
DDR4 DRAM, 256MX64, CMOS, PBGA366
类别
Semiconductors Memory ICs DRAMs DDR4 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
12
Access Mode
MULTI BANK PAGE BURST
Length (mm)
12.7
JESD-30 Code
R-PBGA-B366
Memory Width
64
Package Code
VFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR4 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Temperature Grade
OTHER
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
Memory Organization
256MX64
Number of Functions
1
Number of Terminals
366
Terminal Pitch (mm)
0.4
Number of Words Code
256M
Memory Density (bits)
17179869184
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
0.95
Supply Voltage-Max (V)
1.17
Supply Voltage-Min (V)
1.06
Supply Voltage-Nom (V)
1.1
Number of Words (words)
268435456
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-30