NT6AN512T32AV-J2
Nanya Technology Corporation
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明DRAM Chip Mobile LPDDR4 SDRAM 16Gbit 512Mx32 1.1V/1.8V 200-Pin FBGA
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)10
- Access ModeMULTI BANK PAGE BURST
- Length (mm)15
- JESD-30 CodeR-PBGA-B200
- Memory Width32
- Package CodeVFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeLPDDR4 DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Number of Ports1
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMIMAL SUPPLY VOLTAGE; TERM PITCH-MAX
- Memory Organization512MX32
- Number of Functions1
- Number of Terminals200
- Terminal Pitch (mm)0.8
- Number of Words Code512M
- Memory Density (bits)17179869184
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)1
- Supply Voltage-Max (V)1.17
- Supply Voltage-Min (V)1.06
- Supply Voltage-Nom (V)1.1
- Number of Words (words)536870912
- Sequential Burst Length16,32
- Standby Current-Max (A)0.06
- Supply Current-Max (mA)680
- Interleaved Burst Length16,32
- Package Equivalence CodeBGA200,12X22,32/25
- Clock Frequency-Max (MHz)1866
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)105
- Operating Temperature-Min (Cel)-30
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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NT6AN512T32AV-J2