Nanya Technology Corporation NT6AN512M16AV-J3 | 搜芯易Sourcengine

Nanya Technology Corporation NT6AN512M16AV-J3

生命周期状态
Active-Unconfirmed
RoHS
符合RoHS标准
说明
LPDDR4 DRAM, 512MX16, CMOS, PBGA200
类别
Semiconductors Memory ICs DRAMs LPDDR4 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Technology
CMOS
Width (mm)
10
Access Mode
MULTI BANK PAGE BURST
Length (mm)
15
JESD-30 Code
R-PBGA-B200
Memory Width
16
Package Code
VFBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
LPDDR4 DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Temperature Grade
OTHER
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX
Memory Organization
512MX16
Number of Functions
1
Number of Terminals
200
Terminal Pitch (mm)
0.8
Number of Words Code
512M
Memory Density (bits)
8589934592
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1
Supply Voltage-Max (V)
1.17
Supply Voltage-Min (V)
1.06
Supply Voltage-Nom (V)
1.1
Number of Words (words)
536870912
Operating Temperature-Max (Cel)
105
Operating Temperature-Min (Cel)
-30