Nanya Technology Corporation NT5TU64M8EE-3CI | 搜芯易Sourcengine

Nanya Technology Corporation NT5TU64M8EE-3CI

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR2 DRAM, 64MX8, 0.45ns, CMOS, PBGA60
类别
Semiconductors Memory ICs DRAMs DDR2 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.28
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Width (mm)
8
Access Mode
FOUR BANK PAGE BURST
Length (mm)
10
JESD-30 Code
R-PBGA-B60
Memory Width
8
Package Code
VFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR2 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
64MX8
Number of Functions
1
Number of Terminals
60
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
0.45
Number of Words Code
64M
Memory Density (bits)
536870912
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1
Supply Voltage-Max (V)
1.9
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
67108864
Sequential Burst Length
4,8
Interleaved Burst Length
4,8
Package Equivalence Code
BGA60,9X11,32
Clock Frequency-Max (MHz)
333
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
95
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED