Nanya Technology Corporation NT5DS64M4BG-6K | 搜芯易Sourcengine

Nanya Technology Corporation NT5DS64M4BG-6K

生命周期状态
Discontinued
说明
DDR1 DRAM, 64MX4, 0.7ns, CMOS, PBGA60
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.24
SB Code
8542.32.00.15

Width
8 mm
Length
13 mm
I/O Type
COMMON
Technology
CMOS
Access Mode
FOUR BANK PAGE BURST
JESD-30 Code
R-PBGA-B60
Memory Width
4
Organization
64MX4
Package Code
BGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
268435456 bit
Memory IC Type
DDR1 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Terminal Pitch
1 mm
Access Time-Max
0.7 ns
Number of Ports
1
Number of Words
67108864 words
Seated Height-Max
1.15 mm
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Number of Functions
1
Number of Terminals
60
Number of Words Code
64M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Sequential Burst Length
2,4,8
Interleaved Burst Length
2,4,8
Package Equivalence Code
BGA60,9X12,40/32
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
Clock Frequency-Max (fCLK)
166 MHz
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED