NT5DS16M16DS-6KI
Nanya Technology Corporation
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明DDR2 DRAM, 16MX16, 0.7ns, CMOS, PDSO66
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.24
- SB Code8542.32.00.15
- Width10.16 mm
- Length22.22 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeFOUR BANK PAGE BURST
- JESD-30 CodeR-PDSO-G66
- Memory Width16
- Organization16MX16
- Package CodeTSOP2
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory Density268435456 bit
- Memory IC TypeDDR2 DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Terminal Pitch0.65 mm
- Access Time-Max0.7 ns
- Number of Ports1
- Number of Words16777216 words
- Seated Height-Max1.2 mm
- Temperature GradeINDUSTRIAL
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH
- Supply Current-Max160 mA
- Number of Functions1
- Number of Terminals66
- Standby Current-Max0.004 Amp
- Number of Words Code16M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length2,4,8
- Interleaved Burst Length2,4,8
- Package Equivalence CodeTSSOP66,.46
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Max (Vsup)2.7 V
- Supply Voltage-Min (Vsup)2.3 V
- Supply Voltage-Nom (Vsup)2.5 V
- Clock Frequency-Max (fCLK)166 MHz
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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NT5DS16M16DS-6KI