Nanya Technology Corporation NT5CC512M4DN-CG | 搜芯易Sourcengine

Nanya Technology Corporation NT5CC512M4DN-CG

生命周期状态
Active
RoHS
符合RoHS标准
说明
DDR3L DRAM, 512MX4, 0.255ns, CMOS, PBGA78
类别
Semiconductors Memory ICs DRAMs DDR3L DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PBGA-B78
Memory Width
4
Package Code
FBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR3L DRAM
Refresh Cycles
8192
DLA Qualification
Not Qualified
Temperature Grade
OTHER
Terminal Position
BOTTOM
Memory Organization
512MX4
Number of Terminals
78
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
0.255
Number of Words Code
512M
Memory Density (bits)
2147483648
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Nom (V)
1.35
Number of Words (words)
536870912
Sequential Burst Length
4,8
Standby Current-Max (A)
0.012
Supply Current-Max (mA)
205
Interleaved Burst Length
4,8
Package Equivalence Code
BGA78,9X13,32
Clock Frequency-Max (MHz)
667
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
0