Nanya Technology Corporation NT5CC128M8GN-EKT | 搜芯易Sourcengine

Nanya Technology Corporation NT5CC128M8GN-EKT

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR3L DRAM, 128MX8, 0.195ns, CMOS, PBGA78
类别
Semiconductors Memory ICs DRAMs DDR3L DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Width (mm)
8
Access Mode
MULTI BANK PAGE BURST
Length (mm)
10.5
JESD-30 Code
R-PBGA-B78
Memory Width
8
Package Code
VFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR3L DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
OTHER
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
128MX8
Number of Functions
1
Number of Terminals
78
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
0.195
Number of Words Code
128M
Memory Density (bits)
1073741824
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1
Supply Voltage-Max (V)
1.45
Supply Voltage-Min (V)
1.283
Supply Voltage-Nom (V)
1.35
Number of Words (words)
134217728
Sequential Burst Length
8
Supply Current-Max (mA)
162
Interleaved Burst Length
8
Package Equivalence Code
BGA78,9X13,32
Clock Frequency-Max (MHz)
933
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-20
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED