Nanya Technology Corporation NT5AD512M8E3-JRT | 搜芯易Sourcengine

Nanya Technology Corporation NT5AD512M8E3-JRT

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
说明
DRAM Chip DDR4 SDRAM 4Gbit 512Mx8 1.2V
类别
Semiconductors Memory ICs DRAMs DDR4 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
7.5
Access Mode
FOUR BANK PAGE BURST
Length (mm)
10.5
JESD-30 Code
R-PBGA-B78
Memory Width
8
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR4 DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Terminal Position
BOTTOM
Memory Organization
512MX8
Number of Functions
1
Number of Terminals
78
Terminal Pitch (mm)
0.8
Number of Words Code
512M
Memory Density (bits)
4294967296
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
1.26
Supply Voltage-Min (V)
1.14
Supply Voltage-Nom (V)
1.2
Number of Words (words)
536870912
Sequential Burst Length
4,8
Standby Current-Max (A)
0.057
Supply Current-Max (mA)
249
Interleaved Burst Length
4,8
Package Equivalence Code
BGA78,9X13,32
Clock Frequency-Max (MHz)
1600
Operating Temperature-Max (Cel)
95
Operating Temperature-Min (Cel)
-40