NT5AD256M16B2-FMI
Nanya Technology Corporation
- 生命周期状态Active-Unconfirmed
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明DDR4 DRAM, 256MX16, CMOS, PBGA96
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- Width9 mm
- Length13 mm
- TechnologyCMOS
- Access ModeFOUR BANK PAGE BURST
- JESD-30 CodeR-PBGA-B96
- Memory Width16
- Organization256MX16
- Package CodeTFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density4294967296 bit
- Memory IC TypeDDR4 DRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch0.8 mm
- Number of Ports1
- Number of Words268435456 words
- Seated Height-Max1.2 mm
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Number of Functions1
- Number of Terminals96
- Number of Words Code256M
- Package Body MaterialPLASTIC/EPOXY
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Max (Vsup)1.26 V
- Supply Voltage-Min (Vsup)1.14 V
- Supply Voltage-Nom (Vsup)1.2 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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NT5AD256M16B2-FMI