Nanya Technology Corporation NT5AD1024M8A3-IXI | 搜芯易Sourcengine

Nanya Technology Corporation NT5AD1024M8A3-IXI

生命周期状态
Active
RoHS
符合RoHS标准
说明
DDR4 DRAM, 1GX8, CMOS, PBGA78
类别
Semiconductors Memory ICs DRAMs DDR4 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
7.5
Access Mode
FOUR BANK PAGE BURST
Length (mm)
12
JESD-30 Code
R-PBGA-B78
Memory Width
8
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR4 DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
1GX8
Number of Functions
1
Number of Terminals
78
Terminal Pitch (mm)
0.8
Number of Words Code
1G
Memory Density (bits)
8589934592
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
1.26
Supply Voltage-Min (V)
1.14
Supply Voltage-Nom (V)
1.2
Number of Words (words)
1073741824
Sequential Burst Length
4,8
Interleaved Burst Length
4,8
Package Equivalence Code
BGA78,9X13,32
Clock Frequency-Max (MHz)
1467
Operating Temperature-Max (Cel)
95
Operating Temperature-Min (Cel)
-40