Nanya Technology Corporation NT5AD1024M8A3-GZT | 搜芯易Sourcengine

Nanya Technology Corporation NT5AD1024M8A3-GZT

生命周期状态
Active-Unconfirmed
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR4 DRAM, 1GX8, CMOS, PBGA78
类别
Semiconductors Memory ICs DRAMs DDR4 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Width
7.5 mm
Length
12 mm
I/O Type
COMMON
Technology
CMOS
Access Mode
FOUR BANK PAGE BURST
JESD-30 Code
R-PBGA-B78
Memory Width
8
Organization
1GX8
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
8589934592 bit
Memory IC Type
DDR4 DRAM
Operating Mode
SYNCHRONOUS
Terminal Pitch
0.8 mm
Number of Ports
1
Number of Words
1073741824 words
Seated Height-Max
1.2 mm
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Number of Functions
1
Number of Terminals
78
Number of Words Code
1G
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Sequential Burst Length
4,8
Interleaved Burst Length
4,8
Package Equivalence Code
BGA78,9X13,32
Operating Temperature-Max
95 Cel
Operating Temperature-Min
-40 Cel
Supply Voltage-Max (Vsup)
1.26 V
Supply Voltage-Min (Vsup)
1.14 V
Supply Voltage-Nom (Vsup)
1.2 V
Clock Frequency-Max (fCLK)
1200 MHz