NT56V1680A0T-10
Nanya Technology Corporation
- 生命周期状态Active
- REACHREACH compliant
- 说明Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDSO-G44
- Memory Width8
- Package CodeTSOP
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory IC TypeSYNCHRONOUS DRAM
- Refresh Cycles4096
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Memory Organization2MX8
- Number of Terminals44
- Access Time-Max (ns)6
- Number of Words Code2M
- Memory Density (bits)16777216
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Supply Voltage-Nom (V)3.3
- Number of Words (words)2097152
- Sequential Burst Length1,2,4,8
- Standby Current-Max (A)0.002
- Supply Current-Max (mA)140
- Interleaved Burst Length1,2,4,8
- Package Equivalence CodeTSOP44(UNSPEC)
- Clock Frequency-Max (MHz)100
- Operating Temperature-Max (Cel)65
- Operating Temperature-Min (Cel)0
NT56V1680A0T-10有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
NT56V1680A0T-10