Nanya Technology Corporation NT512T64UH8A1FN-37B | 搜芯易Sourcengine

Nanya Technology Corporation NT512T64UH8A1FN-37B

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR DRAM Module, 64MX64, 0.5ns, CMOS
类别
Semiconductors Memory ICs DRAMs DDR DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Access Mode
DUAL BANK PAGE BURST
JESD-30 Code
R-XZMA-N200
Memory Width
64
Organization
64MX64
Package Code
DIMM
Self Refresh
YES
JESD-609 Code
e4
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory Density
4294967296 bit
Memory IC Type
DDR DRAM MODULE
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Terminal Pitch
0.6 mm
Access Time-Max
0.5 ns
Number of Ports
1
Number of Words
67108864 words
Terminal Finish
GOLD
Temperature Grade
OTHER
Terminal Position
ZIG-ZAG
Additional Feature
AUTO/SELF REFRESH
Supply Current-Max
1048 mA
Number of Functions
1
Number of Terminals
200
Standby Current-Max
0.04 Amp
Number of Words Code
64M
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Output Characteristics
3-STATE
Package Equivalence Code
DIMM200,24
Operating Temperature-Max
85 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
Clock Frequency-Max (fCLK)
267 MHz