Nanya Technology Corporation NT512T64UH4D0FY-AD | 搜芯易Sourcengine

Nanya Technology Corporation NT512T64UH4D0FY-AD

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR DRAM Module, 64MX8, 0.4ns, CMOS
类别
Semiconductors Memory ICs DRAMs DDR DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.28
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Width (mm)
3.18
Access Mode
SINGLE BANK PAGE BURST
Length (mm)
133.35
JESD-30 Code
R-XDMA-N240
Memory Width
8
Package Code
DIMM
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory IC Type
DDR DRAM MODULE
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
AUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM
Memory Organization
64MX8
Number of Functions
1
Number of Terminals
240
Terminal Pitch (mm)
1
Access Time-Max (ns)
0.4
Number of Words Code
64M
Memory Density (bits)
536870912
Package Body Material
UNSPECIFIED
Output Characteristics
3-STATE
Seated Height-Max (mm)
30
Supply Voltage-Max (V)
1.9
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
67108864
Standby Current-Max (A)
0.035
Supply Current-Max (mA)
1670
Package Equivalence Code
DIMM240,40
Clock Frequency-Max (MHz)
400
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
55
Operating Temperature-Min (Cel)
0
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED