Nanya Technology Corporation NT512D64S8HABG-6 | 搜芯易Sourcengine

Nanya Technology Corporation NT512D64S8HABG-6

生命周期状态
Discontinued
REACH
REACH compliant
说明
DDR DRAM Module, 64MX64, 0.7ns, CMOS
类别
Semiconductors Memory ICs DRAMs DDR DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Access Mode
DUAL BANK PAGE BURST
JESD-30 Code
R-XDMA-N184
Memory Width
64
Organization
64MX64
Package Code
DIMM
Self Refresh
YES
JESD-609 Code
e4
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory Density
4294967296 bit
Memory IC Type
DDR DRAM MODULE
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Terminal Pitch
1.27 mm
Access Time-Max
0.7 ns
Number of Ports
1
Number of Words
67108864 words
Terminal Finish
GOLD
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
AUTO/SELF REFRESH
Supply Current-Max
2400 mA
Number of Functions
1
Number of Terminals
184
Number of Words Code
64M
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Output Characteristics
3-STATE
Package Equivalence Code
DIMM184
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
Clock Frequency-Max (fCLK)
166 MHz