NT4GTT72U4PB1UN-3C
Nanya Technology Corporation
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明DDR DRAM Module, 512MX72, 0.45ns, CMOS
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeDUAL BANK PAGE BURST
- JESD-30 CodeR-XDMA-N240
- Memory Width72
- Organization512MX72
- Package CodeDIMM
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density38654705664 bit
- Memory IC TypeDDR DRAM MODULE
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Terminal Pitch1 mm
- Access Time-Max0.45 ns
- Number of Ports1
- Number of Words536870912 words
- Temperature GradeOTHER
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH
- Supply Current-Max6435 mA
- Number of Functions1
- Number of Terminals240
- Number of Words Code512M
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Output Characteristics3-STATE
- Package Equivalence CodeDIMM240,40
- Operating Temperature-Max85 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)1.9 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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NT4GTT72U4PB1UN-3C