Nanya Technology Corporation NT4GC64B8HB0NF-CG | 搜芯易Sourcengine

Nanya Technology Corporation NT4GC64B8HB0NF-CG

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR3 DRAM Module, 512MX64, CMOS
类别
Semiconductors Memory ICs DRAMs DDR3 DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
4
Access Mode
DUAL BANK PAGE BURST
Length (mm)
133.35
JESD-30 Code
R-XDMA-N240
Memory Width
64
Package Code
DIMM
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
J-STD-609 Code
e4
Memory IC Type
DDR3 DRAM MODULE
Operating Mode
SYNCHRONOUS
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
OTHER
Terminal Position
DUAL
Additional Feature
AUTO/SELF REFRESH; WD-MAX
Memory Organization
512MX64
Number of Functions
1
Number of Terminals
240
Terminal Pitch (mm)
1
Number of Words Code
512M
Memory Density (bits)
34359738368
Package Body Material
UNSPECIFIED
Seated Height-Max (mm)
30.5
Supply Voltage-Max (V)
1.575
Supply Voltage-Min (V)
1.425
Supply Voltage-Nom (V)
1.5
Number of Words (words)
536870912
Sequential Burst Length
4,8
Standby Current-Max (A)
0.211
Supply Current-Max (mA)
3714
Interleaved Burst Length
4,8
Package Equivalence Code
DIMM240,40
Clock Frequency-Max (MHz)
667
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
0
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED