NT2GC64B88B0NF-BE
Nanya Technology Corporation
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明DDR3 DRAM Module, 256MX64, CMOS
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- Width2.7 mm
- Length133.35 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeSINGLE BANK PAGE BURST
- JESD-30 CodeR-XDMA-N240
- Memory Width64
- Organization256MX64
- Package CodeDIMM
- Self RefreshYES
- JESD-609 Codee4
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density17179869184 bit
- Memory IC TypeDDR3 DRAM MODULE
- Operating ModeSYNCHRONOUS
- Terminal Pitch1 mm
- Number of Ports1
- Number of Words268435456 words
- Seated Height-Max30.5 mm
- Temperature GradeOTHER
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH; WD-MAX
- Supply Current-Max2948 mA
- Number of Functions1
- Number of Terminals240
- Standby Current-Max0.106 Amp
- Number of Words Code256M
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Sequential Burst Length4,8
- Interleaved Burst Length4,8
- Package Equivalence CodeDIMM240,40
- Operating Temperature-Max85 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)1.575 V
- Supply Voltage-Min (Vsup)1.425 V
- Supply Voltage-Nom (Vsup)1.5 V
- Clock Frequency-Max (fCLK)533 MHz
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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NT2GC64B88B0NF-BE