NT256D64SH8B0FA-6K
Nanya Technology Corporation
- 生命周期状态Discontinued
- REACHREACH compliant
- 说明DDR DRAM Module, 32MX64, 0.7ns, CMOS
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeDUAL BANK PAGE BURST
- JESD-30 CodeR-XDMA-N172
- Memory Width64
- Organization32MX64
- Package CodeDIMM
- Self RefreshYES
- JESD-609 Codee4
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density2147483648 bit
- Memory IC TypeDDR DRAM MODULE
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Terminal Pitch0.5 mm
- Access Time-Max0.7 ns
- Number of Ports1
- Number of Words33554432 words
- Terminal FinishGOLD
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH
- Supply Current-Max2400 mA
- Number of Functions1
- Number of Terminals172
- Standby Current-Max0.1 Amp
- Number of Words Code32M
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Output Characteristics3-STATE
- Package Equivalence CodeDIMM172,20
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)2.7 V
- Supply Voltage-Min (Vsup)2.3 V
- Supply Voltage-Nom (Vsup)2.5 V
- Clock Frequency-Max (fCLK)166 MHz
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NT256D64SH8B0FA-6K