ONSEMI NSVS1001CLTWG | 搜芯易Sourcengine

ONSEMI NSVS1001CLTWG

生命周期状态
Active
RoHS
符合RoHS标准
说明
Power Bipolar Transistor, 2.5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 5 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-X5
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
UNSPECIFIED
J-STD-609 Code
e3
VCEsat-Max (V)
0.8
Case Connection
COLLECTOR
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
5
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
140
Power Dissipation-Max (W)
15
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
2.5
Operating Temperature-Max (Cel)
175
Collector-emitter Voltage-Max (V)
100
Collector-base Capacitance-Max (pF)
26
Transition Frequency-Nom (fT) (MHz)
300
Screening Level / Reference Standard
AEC-Q101