ONSEMI NSVMUN5334DW1T1G | 搜芯易Sourcengine

ONSEMI NSVMUN5334DW1T1G

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans Digital BJT NPN/PNP 50V 100mA 385mW Automotive AEC-Q101 6-Pin SC-88 T/R
类别
Semiconductors Transistors Unijunction Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G6
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
VCEsat-Max (V)
0.25
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
DUAL
Additional Feature
BUILT IN BIAS RESISTOR RATIO IS 0.47
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN AND PNP
DC Current Gain-Min (hFE)
80
Power Dissipation-Max (W)
0.385
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
0.1
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Collector-emitter Voltage-Max (V)
50
Screening Level / Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
30