ONSEMI NSVMMBTH81LT3G | 搜芯易Sourcengine

ONSEMI NSVMMBTH81LT3G

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans RF BJT PNP 20V 0.05A 225mW 3-Pin SOT-23 T/R Automotive AEC-Q101
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
JEDEC-95 Code
TO-236
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
VCEsat-Max (V)
0.5
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
Highest Frequency Band
VERY HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
60
Power Dissipation-Max (W)
0.225
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
0.05
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Collector-emitter Voltage-Max (V)
20
Power Dissipation Ambient-Max (W)
0.225
Collector-base Capacitance-Max (pF)
0.85
Transition Frequency-Nom (fT) (MHz)
600
Screening Level / Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
30