ONSEMI NSVF6003SB6T1G | 搜芯易Sourcengine

ONSEMI NSVF6003SB6T1G

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans RF BJT NPN 12V 0.15A 800mW Automotive AEC-Q101 6-Pin CPH T/R
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G6
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e6
Terminal Finish
Tin/Bismuth (Sn/Bi)
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
100
Power Dissipation-Max (W)
0.8
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
0.15
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Collector-emitter Voltage-Max (V)
12
Collector-base Capacitance-Max (pF)
2
Transition Frequency-Nom (fT) (MHz)
7000
Screening Level / Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
30